Peng Zhang1, Xingguo Wang1, Huaning Jiang1, Yongji Gong1*

1Beihang University, Department of Materials Science and Engineering, Beijing, 100191, China

EXTENDED ABSTRACT: 2D materials with atomic thickness is very promising to work as next-generation electronic devices and highly efficient electrochemical devices including electrocatalyst and energy storage [1, 2]. However, the properties of 2D materials are very sensitive to detailed features of the composition and grain size. For example, the numerous grain boundaries of polycrystalline 2D materials will decrease the carrier mobilities significantly. The best method to synthesize 2D materials for the applications in electronic devices is chemical vapor deposition, in which the crystal size is large and the crystal quality is high. However, due to the uncontrollability of the precise vapor pressure of each element, it is impossible to realize high throughput synthesis of 2D Materials by traditional chemical vapor deposition method. Also, the traditional method of high throughput synthesis cannot get 2D materials with high grain size. In this report, a new method to synthesize 2D materials named melt-solution-precipitation is proposed [3]. By this method, large size 2D materials with precise composition can be grown. If precursors with spatially controlled composition is prepared, high throughput synthesis of 2D Materials with large grain size can be realized. At last, the properties of high quality 2D materials are characterized. 

Keywords: 2D materials; Flux-assisted growth; Material genome; Large grain size

REFERENCES

[1] Yongji Gong*, et al, Nature Synthesis., 12 (2022) 809.
[2] Yongji Gong*, et al, Nature Comm., 12 (2021) 809.

[3] Yongji Gong, et al, Nat. Nanotech. 13 (2018) 294.